Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

Siyu Cao,Lichun Zhang,Sajid Ur Rehman,Buwen Cheng,Yue Zhao,Shuai Feng,Qiming Wang,Chuanbo Li,Yuhua Zuo

doi:10.1186/s11671-018-2559-5

Abstract

In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer and tunneling effect on the APDs is fully understood. The design of charge layer (including doping level and thickness) can be calculated by our predictive model for different multiplication thickness. We find that as the thickness of charge layer increases, the suitable doping level range in charge layer decreases. Compared to thinner charge layer, performance of APD varies significantly via several percent deviations of doping concentrations in thicker charge layer. Moreover, the generation rate (Gbtt) of band-to-band tunnel is calculated, and the influence of tunneling effect on avalanche field was analyzed. We confirm that avalanche field and multiplication factor (Mn) in multiplication will decrease by the tunneling effect. The theoretical model and analysis are based on InGaAs/InAlAs APD; however, they are applicable to other APD material systems as well.

Highlights

In0.53Ga0.47As avalanche photodiodes (APDs) are the most important photodetectors for short-wave infrared detection
A device model based on experimental data was built to predict dark count rate (DCR) and single-photon detection efficiency (SPDE) of InGaAsP/InP single-photon avalanche photodiode (SPAD) in [9], and an integrated simulation platform that can evaluate the decoy-state quantum key distribution performance of InGaAs/InP SPADs was built in [10]
Influence of Charge Layer Thickness From [14], a suitable field distribution in InGaAs/ InAlAs APD should comply with those rules

Summary

Introduction

In0.53Ga0.47As (referred to hereafter as InGaAs) avalanche photodiodes (APDs) are the most important photodetectors for short-wave infrared detection. They are significant in traditional fields, such as optical fiber communication, reconnaissance applications, and remote sensing. Due to the quick development of single-photon detection in quantum key distribution [1], time-resolved spectroscopy [2], optical VLSI circuit inspection [3], and 3D laser ranging [4], APDs as the key component in these applications have attracted increasing attention [5, 6]. Tosi et al presented the design criteria of a novel InGaAs/InP single-photon avalanche photodiode (SPAD) with high SPDE (30%, 225 K), low noise, and low timing jitter [8]. Acerbi et al presented design criteria for InGaAs/ InP single-photon APDs with a custom SPAD simulator [11]. In simulation of InAlAs-based APDs, a device model that based on the Monte Carlo method was established to

Methods

Results

Conclusion