Abstract
Impact ionization in charge layer of InP/InGaAs separated absorption, grading, charge and multiplication avalanche photodiodes (SAGCM APDs) has been studied by analytical-band Monte Carlo (MC) simulations. The mean ionization coefficients are derived by MC model and compared with the mean ionization coefficients calculated from electric-field-dependent ionization coefficient. And modification of ionization coefficient is made to extend the ionization-coefficient-based models for the simulations of charge layer in SAGCM APDs, which releases intensive calculation in structure optimization by MC simulations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
