Abstract
Impact ionization in charge layer of InP/InGaAs separated absorption, grading, charge and multiplication avalanche photodiodes (SAGCM APDs) has been studied by analytical-band Monte Carlo (MC) simulations. The mean ionization coefficients are derived by MC model and compared with the mean ionization coefficients calculated from electric-field-dependent ionization coefficient. And modification of ionization coefficient is made to extend the ionization-coefficient-based models for the simulations of charge layer in SAGCM APDs, which releases intensive calculation in structure optimization by MC simulations.
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