Abstract
Abstract Ab initio calculations of the electronic structure of nickel and cobalt disilicide films were made in the terms of the film method of linearized augmented plane waves. Calculated photoemission and X-ray emission spectra were compared with experimental data. The structure of photoemission spectra of the films at low excitation energies (up to 50 eV) is stipulated by d-states of transition metal and s- and p-states of silicon. Compared with the spectra of the bulk samples, Si L 2,3 spectra of film silicides demonstrate an increased intensity of the peak near Fermi level. The nature of this transformation is discussed.
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