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Abstract
We present a model for studying the adsorption of Sb atoms on the clean GaAs(110) surface and analyse the consequences of the adsorption on the reflectance anisotropy spectroscopy (RAS). A 1 × 8 unit cell is taken as a basis of the Sb-covered GaAs(110) structure. We allow the Sb-covered surface to be disordered by letting every surface atom move freely around its equilibrium position. In order to obtain a representative RAS spectrum of the surface we generate an ensemble with N different structural realizations of the surface and the ensemble RAS average is performed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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