Theoretical Investigations of Half-Metallicity in Cr-Substituted GaN, GaP, GaAs, GaSb Material Systems

Abstract

Theoretical investigations of half-metallicity of Cr-substituted Ga0.875Cr0.125M (M = N, P, As, Sb) material systems are presented in this article The spin polarized band structures, electronic densities of states, spin splitting around the Fermi level and crystal field splitting energies of these materials are addressed in their co-relationship with their possible spintronics applications. These materials are found to be half-metallic, that is, metallic in one spin state and insulator in other.