Abstract
Recently, a variety of different n-type Si solar cells with carrier-selective contacts featuring tunnel oxides achieving remarkable cell results has been presented. Theoretical investigations on this topic are rare, especially simulations actually accounting for tunneling through the oxide interlayer. In this work we investigate the influence of different parameters affecting the passivation quality and thus the device performance by means of numerical device simulation. Thereby, a fundamental understanding of solar cells with carrier-selective contacts featuring tunnel oxides is generated which is essential to further develop this promising technology.
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