Abstract
A numerical model for the investigation of ultrafast gain and phase dynamics in InGaAsP bulk semiconductor optical amplifiers for transient cross phase modulation is presented in considering non-equilibrium carrier distribution and carrier temperature dynamics for different probe wavelengths. Results indicate that the nonlinear patterning of transient cross phase modulation can be effectively suppressed by an assist light, especially for the up-conversion and the assist light in counter-propagating scheme.
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