Abstract
In this letter, we present the first detailed theoretical study of gain in strained InGaAs/AlGaAs quantum wells, taking into account the complex nature of the valence-subband structure, which must be included in any realistic model. We first compare the material gain as a function of carrier and radiative current density for a strained and unstrained quantum well. We then present calculations of theoretical differential gain, carrier density, and radiative current density at transparency as a function of indium mole fraction in the well.<lz> <lz> <lz>
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