Abstract
By carefully analyzing the latest composition-dependent parameters of SiGeSn alloys, we come to realize that this system could provide type-II energy band alignment at direct bandgap condition. The discovery inspires us to explore the mid-infrared interband cascade laser (ICL) in SiGeSn system. Based on the eight-band k ⋅ p model, we theoretically design three schemes of ICL, in which the active region and the carrier injectors are optimized simultaneously. Afterward, the properties of TE-mode optical gain spectrums and differential gain are investigated individually for each scheme. Furthermore, the spontaneous emission spectrums and radiative current density are also calculated. Our theoretical results indicate that the active region composed of double-electron and triple-hole quantum wells has the best gain performance, reaching 660 cm−1 for a single period of the ICL under 7.8 × 1018 cm−3 injected electron density. This work opens up another type of infrared lasers that can be developed from the group-IV system, offering a new pathway to achieving the monolithic integration in Si photonics.
Highlights
Driven by the mature microelectronics industry, the CMOS-compatible silicon photonics, providing the possibility of monolithic optoelectronics integration, has been long pursued since 1990s [1,2,3]
Our theoretical results indicate that the active region composed of double-electron and triple-hole quantum wells has the best gain performance, reaching 660 cm−1 for a single period of the interband cascade laser (ICL) under 7.8 ×1018 cm−3 injected electron density
Because the spontaneous emission and radiative current density have a significant impact on the laser performance, we have studied their dependence on the different injection conditions
Summary
Driven by the mature microelectronics industry, the CMOS-compatible silicon photonics, providing the possibility of monolithic optoelectronics integration, has been long pursued since 1990s [1,2,3]. Compared to the type-I aligned bulk GeSn/SiGeSn heterostructure, the multiple quantum well (QW) structure could sharply lower the lasing threshold [12] as predicted in an earlier study [13]. All these progress have stimulated the exploration of electrically pumped lasers in group-IV system. Owing to the relatively longer upper-state carrier lifetime and voltage-efficient cascade scheme, ICL possesses higher quantum efficiency and lower threshold power density in comparison with QCLs. ICL has been widely investigated and show great potentials in. The eight-band k · p theory is utilized to design three specific ICL schemes based on the SiGeSn system. Our results confirm the feasibility of implementing ICLs in SiGeSn system and the gain coefficient of single period can reach 660 cm−1 under 7.8 ×1018 cm−3 injected carrier density
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
