Abstract
We have calculated the gain function of a type-II W-design AlSb/InAs/GaAsSb/InAs/AlSb quantum wells to be used in an active region of interband cascade lasers, for two linear polarizations of in-plane propagating light: transverse-electric and transverse-magnetic. The effect of external electric field, imitating the conditions in a working device, has also been taken into account. We have proposed an active region design suitable for practical realization of mid-infrared lasing devices with controllable polarization properties. We have also demonstrated a way to achieve polarization-independent gain in mid-infrared emitters, which has not been reported so far.
Highlights
Interband cascade lasers (ICLs) are an important class of efficient mid-infrared (MIR) semiconductor light sources
The polarization selection rules for optical transitions in quantum well (QW) structures determine the contribution of transverse electric (TE) and transverse magnetic (TM) polarizations in in-plane emission, depending of its origin
We have studied a non-standard system of an ICL active region in a form of type-II W-design AlSb/InAs/GaAsSb/InAs/AlSb QWs grown on a GaSb substrate, i.e. including a tensile strained GaAsSb layer for the confinement of holes
Summary
Interband cascade lasers (ICLs) are an important class of efficient mid-infrared (MIR) semiconductor light sources. Polarization-independent gain in mid-infrared interband cascade lasers
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