Abstract
AbstractCarrier injection rate in tunnel injection quantum well structures used in semiconductor lasers was investigated through theoretical analysis. Carrier capture time from 3D‐state to 2D‐state in a conventional quantum well was several ten picoseconds and it is almost uncontrollable characteristics. The tunnel injection structure can be designed to control the carrier injection rate. The carrier transition time from carrier reservoir‐region of the tunnel injection structure to the active well was a few picoseconds when the structure was designed for high speed transition. As results, carrier injection to ground state of the active well takes less than 10 picoseconds. The change of the radiative recombination rate in the active well also defines the optimal design of the tunnel injection structure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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