Abstract
The distribution coefficients of Groups III, IV and V impurities in germanium and silicon were calculated, and very satisfactory agreement with experimental values was obtained. The method of calculation consisted in estimating the change in energy involved in transferring the impurity atoms from a crystalline reservoir to the solid and molten host material respectively. The binding energy of an impurity in the host lattice and the strain energy which it introduces were estimated. The change in vibrational entropy is believed to be negligible.
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