Abstract
In this paper the pressure-magneto-electric effect of Junction Field Effect Transistor (JFET) is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of then-channel silicon JFET with various geometries (W/L), gate voltages (V GS ) and drain voltages (V DS ) is made. The results show that whenP≠o,B=0, the current-pressure sensitivity is about 2.5%. cm2/N, supposingW/L≤1/2–1. Based on that, a junction field effect pressure sensor with high stability and low noise is designed.
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