Abstract
An attempt is made to investigate theoretically the effective electron mass in ultrathin films of ternary chalcopyrate semiconductors in the presence of crossed electric and magnetic fields on the basis of a newly derivedE-k dispersion relation of the conduction electrons, which includes various types of anisotropies in the energy spectrum. It is found, takingn-CdGeAs2 as an example, that the effective electron mass at the Fermi level depends on the Fermi energy and the magnetic and size quantum numbers, respectively, which is a characteristic feature of cross-fields. It is also observed that the crystal field parameter effectively enhances the numerical magnitude of the effective Fermi level mass. The corresponding results for isotropic parabolic energy bands are also obtained from the expressions derived.
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