Abstract
The gain saturation coefficient ε of InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs) is calculated as a function of strain from intrasubband relaxation times. The intrasubband relaxation times are in turn obtained within the random phase approximation (RPA) including carrier-carrier as well as carrier-polar optical phonon interactions. The band structures are included by using the Luttinger–Kohn Hamiltonian [Phys. Rev. 97, 869 (1955)] and a multiband effective mass equation. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to a corresponding increase of the intrasubband relaxation time.
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