Abstract
The gain saturation coefficients of tensile-strained, lattice-matched, and compressive-strained InGaAs/InGaAsP quantum-well lasers (QWLs) are calculated from intrasubband relaxation times. The intrasubband relaxation times are in turn obtained within the random-phase approximation including carrier–carrier and carrier–polar-optical phonon interactions at room temperature. The effects of strain on the band structures are included by taking into account the strain-dependent coupling among heavy-hole, light-hole, and spin-orbit split-off subbands on the basis of the multiband effective-mass theory. It is demonstrated that the gain saturation coefficient in tensile-strained QWLs is less sensitive to the amount of strain than in compressive-strained QWLs where it markedly increases with strain.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
