Theoretical analysis of [formula omitted] emitting GaInNAs QD's on different substrates

Abstract

We present a theoretical study which compares the electronic and optical properties of dilute nitrogen GaInNAs quantum dots (QD) on two different substrates, GaAs and InP. The calculations are based on a 10 band k ⋅ p band-anti-crossing (BAC) Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. We show that 1.55 μ m emission can be achieved on both substrates through appropriate tailoring of the QD size. On GaAs, the dominant dipole matrix element is the e ^ x and e ^ y light polarization, whereas on InP substrate, the dominant component is the e ^ z light polarization. Our results also identifiy the different In and N QD compositions required for long-wavelength emission on both substrates.