Abstract
We present a theoretical study which compares the electronic and optical properties of GaInNAs quantum dots (QD) with dilute amount of nitrogen (< 4%) on two different substrates, GaAs (001) and InP (001). The calculations are based on a 10 band k.p band‐anti‐crossing (BAC) Hamiltonian, incorporating valence, conduction and nitrogen‐induced bands. We show that 1.55 μm emission can be achieved on both substrates through appropriate tailoring of the QD size. On GaAs, the dominant dipole matrix element is the of the in‐plane light polarization, whereas on InP substrate, the dominant component is of the perpendicular light polarization. Our results also identify the different In and N QD compositions required for long‐wavelength emission on both material substrates.
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