Abstract
We analyzed the voltage dependence of the magnetoresistance (MR) ratio of a three-terminal device whose base consists of a magnetic multilayer. The spin-dependent current density of hot electrons in the base, which are injected from an emitter by tunneling, were calculated by using the Liouville equation for the spin-dependent Wigner distribution function. It was found to be necessary to take into account not only the spin dependence of elastic scattering but also the energy dependence of inelastic scattering and, furthermore, the forward-focusing effect of the Schottky barrier that exists at a base/collector interface, in order to understand the large MR ratio observed in this device and its monotonic decrease with increasing applied voltage.
Published Version
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