Abstract
Based on the interaction between β particles and matter and the physical properties of semiconductor devices, the Monte Carlo method was used to simulate the self-absorption effect of β radiation sources and their transport process in different metal/diamond devices. A theoretical calculation model of a p-diamond Schottky barrier diode (pDSBD) betavoltaic cell using an isotropic cuboid source (63Ni) is proposed. The results show that the optimal thickness of the 63Ni radiation source is 2 µm. For the metal materials Al, Au, Cu, Ni and Pt used in the preparation of Schottky contacts, the metal work function significantly affects the output of the pDSBD cells. Among them, the maximum output power density, filling factor, energy conversion efficiency and total energy conversion efficiency of the Al/pDSBD cell are 0.224 µW/cm2, 0.933, 14.53% and 2.06%, respectively.
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