The zinc pressure effect in chlorine-doped ZnSe grown by atmospheric metalorganic chemical vapor deposition

Abstract

An n-type ZnSe has been grown by atmospheric metalorganic chemical vapor deposition in which hydrogen chloride was used as the chlorine-donor source. Epitaxial layers were evaluated by photoluminescence measurements and Hall measurements. An excitonic emission intensity at 4.2 K, which is a donor bound excitonic emission, increased with donor doping concentration increase. The electron carrier concentration varied with a quadratic dependence on the dopant concentration. Chlorine-doped ZnSe characteristics were revealed to be similar in regard to the relation between the electrical and luminescent properties, irrespective of dopant source materials. An increase in zinc partial pressure led to an increase in carrier concentration and the suppression of the self-activated emission intensity. A zinc excess growth condition was revealed to be effective for quality improvement for n-type ZnSe and suppression of the compensation effect, which made the carrier producing efficiency high.