Abstract
Highly conductive p-type ZnTe was grown by atmospheric metalorganic chemical vapor deposition (MOCVD). The source materials were dimethylzinc and diisopropyltelluride. Arsenic was doped into ZnTe with trimethylarsine. The carrier concentration depended on both the growth temperature and VI/II ratio. The highest carrier concentration measured in Hall measurements was 1.3×1019 cm-3, which is the highest ever reported for MOCVD-grown ZnTe. Low-temperature photoluminescence spectra showed strong As-related bound exciton lines and donor-to-acceptor recombination lines.
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