The vertical strained impact ionization MOSFET (VESIMOS) for ultra-sensitive biosensor application

Abstract

This paper venture into prospective ideas of finding the best feasible candidates for future bio-based sensor by exploring an emerging device structure with elevated performance and reliable outcomes of vertical strained impact ionization MOSFET (VESIMOS) with dual strained SiGe and dielectric pocket (DP) technology. An overview of the simulated fabrication process and the performance of the three promising candidates for succession of the conventional vertical Impact Ionization MOSFET (IMOS): Single Channel vertical strained impact ionization MOSFET (SC-VESIMOS) [13], Dual Channel vertical strained impact ionization MOSFET (DC-VESIMOS) [14] and vertical strained impact ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) is investigated using Silvaco package. These three devices offer possibilities to overcome physical limits occurring during the continuous shrinking process like the limitation of the subthreshold swing S to 60 mV/dec at room temperature or rising leakage currents due to tunneling. The performance of these novel devices can be extremely promising for applications where ultra-high sensitivity and fast response is desirable. An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Eventually, these devices will prolong the increase density of transistor on a chip for future application of biosensor nanoelectronics.