The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals

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Traditionally the critical value Γcrit of the ratio Γ of the pulling speed v over the thermal gradient G at the melt–solid interface needed to grow defect free silicon is assumed to be a constant for a given crystal doping and resistivity. Recently it was however shown that Γcrit depends on stress and thus also on G, in particular on its derivative with respect to the distance from the melt–solid interface. As G also depends on v, a process window exists for the critical pulling speed which depends both on the crystal radius and on Γcrit. The implications for the development of pulling processes for large diameter defect free silicon crystals are discussed.