Abstract
In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
