Abstract
The use of semiconductor multilayers for hot electron injection and intervalley transfer have recently been demonstrated. In this study graded composition AlGaAs layers are used to generate a non-equilibrium distribution of electrons, in order to spatially control the transfer of electrons from the Γ to L valleys. The consequent growth of charge and field instabilities has been investigated both experimentally and by Monte-Carlo simulation. Particular emphasis has been placed on the exploitation of these hot electrons in transferred electron devices. Gunn diodes consisting of such graded gap layers, and transit regions of 1 μm have been fabricated by molecular beam epitaxy. They have been observed to oscillate at a frequency of 95 GHz. Experimental results on these structures, together with their Monte-Carlo simulations, are discussed.
Published Version
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