Abstract
Schottky diodes were successfully fabricated on p+ Si for deep-level transient spectroscopy (DLTS) measurements by the use of hydrogen passivation of boron. Atomic hydrogen was introduced into the near-surface region of boron-doped (100) CZ Si crystals, which had a resistivity of about 0.01Ωcm, at temperatures between room temperature and 300°C by exposure to a hydrogen plasma. Rectifying characteristics were obtained for fabricated Schottky contacts on hydrogenated samples. This was due to the carrier concentration decrease in the near-surface region by hydrogen passivation of boron. As the hydrogenation temperatures were increased, the decrease in carrier concentration was significant. Some results of DLTS measurements were given for fabricated diodes.
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