Abstract
This paper describes two techniques for extending the capabilities of conventional four-point sheet resistance measurements to the characterization of low-dose (10 10−10 13 ions/cm 2) implantation. One technique, which involves the direct measurement of sheet resistance values as great as 100 kΩ/□ utilizes high resistivity substrates in conjunction with a special cleaning procedure for passivating the silicon surface. The second technique relies on the fact that the sheet resistance of an impurity layer will increase significantly when damaged by relatively low implant doses. This technique is extremely sensitive, and can be used for monitoring doses as low as 10 10 frsol| ions/ cm 2 as well as electrically inactive impurities such as silicon, oxygen and argon.
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