Abstract
As in optical lithography, the use of a bias, or difference in linewidth between the exposed pattern and developed resist profile, in electron beam lithography will lead to improved resist profile shape quality and linewidth control. Simulation is used to study the key aspects of choosing the proper bias for vertical resist profiles and to illustrate the advantages of using a bias in electron beam lithography. The use of a bias is also shown to aid in proximity correction. The techniques of dose correction, bias and/or exposure position correction, and a combination of bias and dose correction are investigated by means of a comparison of developed resist profile shape quality and linewidth sensitivity.
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