Abstract

In recent years quantitative diffraction techniques have been developed which can obtain accurate low-order structure factors by matching theoretical calculations to experimental energy-filtered Convergent Beam Electron Diffraction (CBED) patterns. These techniques rely on the calculation of accurate diffraction intensities which requires lengthy computation. We have previously described a method of reducing computing times using perturbation theory. In this paper we describe a modification to our original zone-axis pattern matching method to include Bethe potentials. The modifications to the pattern matching process are described and the results of structure factor measurements for Si [110] patterns using Bethe potentials are discussed.

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