The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

Abstract

Ultrashort gate-length pseudomorphic high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. The RF response and the cutoff frequency fT have been obtained for physical gate lengths ranging from 10 to 50 nm. These results, in turn, have been used in a transit-time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for fT, which we find to be 2.9 THz in the device studied. Importantly, the effective gate lengths are considerably shorter than the depletion lengths. Thus, in general, any estimate of fT based on the latter quantity is likely too small by a quite significant amount.