Abstract
In Al0.1Ga0.9As:Ge two photoconductivity (PC) effects related to the DX− (persistent PC) and A1 (giant PC) states are studied under hydrostatic pressure. We found that the barrier for electron capture to the DX− state, responsible for the persistent PC, changes its character for p > 109 Pa and becomes pinned to the conduction band (CB) edge. Another barrier linked with giant PC, responsible for electron capture on A1 state is pinned to the CB edge for all pressures. A new universal configurational coordinate diagram of donor related levels including two types of lattice deformation, of C3v symmetry for DX− and Td symmetry for A1, is proposed. It describes both shallow–deep A1 and DX− level instabilities and explains e.g. why capture of electrons to the DX− state goes via an intermediate effective mass state, or why for extremely sharp shallow A1 state anticrossing behavior is observed.
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