Abstract
Abstract Within a two-band model of narrow-gap semiconductor, the interaction between electrons and transverse optical (TO) phonons is considered in the field of strong electromagnetic wave. The temperature of the structural phase transition due to TO-mode condensation with q = 0 is found to decrease in the field of the wave. Increase in the energy of direct optical interband dipole transition λ produces a change in the kind of the phase transition, so that a tricritical point appears in the phase diagram with variables (T, λ). The critical field intensity of the wave is found to be 106V/cm in the case of SnTe.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
