Abstract
Analysis of nonlinear mechanisms of light beam absorption in transparent materials under high power and ultrashort pulses laser action is presented. The processes of nonlinear absorption and ablation of transparent materials (such as nitride semiconductor, sapphire and others) under ṫerawatt/cm2‐laser irradiation with ultrashort pulses are considered. The values of ablation thresholds for different dielectrics are discussed. The threshold appears to grow approximately in proportion to the third power of the material energy bandgap. The model is based on the tunneling absorption under the irradiation by high‐intensity ultrashort pulses. The theory of ionization of solids in a field of strong electromagnetic wave is used. The effect of the material energy bandgap on the laser ablation threshold s adequately explained.
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