Abstract
Formulae are derived allowing the analytic calculation of MOS structure quasi-equilibrium TVS current–voltage characteristics. It is assumed that mobile charges of one polarity are present in the dielectric layer which is held between two blocking electrodes. The voltage drop in the semiconductor electrode is taken into account. Characteristics calculated using the derived formulae are shown to be in good agreement with the experimental characteristics. A simplified method of mobile charge calculation, based on measurement of the current peak height is described, and a convenient way of checking whether proper measurement conditions were chosen is proposed. [Russian Text Ignored]
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