Abstract
The SnO/ZnO QDs/SnO2 p-n junction is prepared via a simple route of continuous sputtering process and liquid phase synthesis method. The transparence and photoelectric conversion of these devices are investigated, which exhibits a high transmittance of about ∼80% and an obvious photoelectric conversion enhancement of about ∼100 times than that of the unmodified p-n junction, that could be mainly attributed to the ZnO QDs, including the unique band gap could provide an efficient photon-generated carrier route and high quantum yield could increase the photon-generated electron.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
