Abstract
The SnO/ZnO QDs/SnO2 p-n junction is prepared via a simple route of continuous sputtering process and liquid phase synthesis method. The transparence and photoelectric conversion of these devices are investigated, which exhibits a high transmittance of about ∼80% and an obvious photoelectric conversion enhancement of about ∼100 times than that of the unmodified p-n junction, that could be mainly attributed to the ZnO QDs, including the unique band gap could provide an efficient photon-generated carrier route and high quantum yield could increase the photon-generated electron.
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Schedule a callMore From: Chemical engineering journal (Lausanne, Switzerland : 1996)
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