Abstract
The NiO thin film ohmic contact to the p-type In0.53Ga0.47As and non-doped In0.53Ga0.48As was experimentally demonstrated. The ohmic contact mechanism is mainly due to the small valence band offset between the NiO and InGaAs. The NiO thin film was synthesized through thermal oxidation. The oxidation time is the key factor affecting the contact properties of the NiO/InGaAs. It is promising for the application of NiO transparent electrodes in III-V compound material-based optical-electronic devices.
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