Abstract
The solid state reaction between Cu and a-Si films was investigated at 150–200°C by depth profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the formation of a homogeneous Cu3Si layer at the interface. The growth of the crystalline silicide follows a parabolic law at 165°C and 200°C. At 150°C a transition from linear to parabolic kinetics is observed. Combining with our previous experimental results showing linear kinetics at 135°C [Acta Materialia, 61 (2013) 7173–7179], the temperature dependence of the linear and parabolic coefficients as well as the transition length can be estimated.
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