Abstract
The analysis of the response of a photoelectrochemical system to a variable light source offers a convenient means for the characterization of a semiconductor‐electrolyte interface. We present analytic solutions for the minority carrier concentrations at the semiconductor surface during pulse, step, sinusoidal, and periodic‐square‐pulse illumination. The analytic solutions can be used to describe the low level injection behavior of wide bandgap semiconductors employed in photoelectrolysis cells and other photoelectrochemical systems.
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