Abstract
The total ionizing dose (TID) effects of X-ray irradiation on graphene/HfO2/Si (Gr/HfO2/Si) Schottky diodes were investigated. The I-V characteristics were studied in detail with different bias conditions during TID irradiation. An increase in the ideality factor and decrease in the Schottky barrier height were observed. Compared with traditional graphene/Si (Gr/Si) Schottky structures, the degradation of electrical characteristics can be effectively suppressed by adding a HfO2 insertion layer between graphene and the Si substrate.
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