The thickness of buffer layer and temperature dependent magneto dynamic properties of Ta/FeGaB/Ta tri-layer

Abstract

In this paper, we have deposited a tri-layer film stack of Ta (25, 50, 75 and 100 nm)/FeGaB (100 nm)/Ta (5 nm) onto Si substrates, and studied ferromagnetic resonance (FMR) properties of the Ta buffer layer thickness and temperature dependence. The surface morphology of the tri-layer film stack is captured by Atomic Force Microscopy (AFM). The static magnetic properties for different buffer layer thickness reveal that both coercive field and remanent magnetization decrease for increasing the Ta buffer layer thickness due to the disturbance of magnetic moments from the FeGaB layer. The dynamic ferromagnetic properties of all samples suggest that narrow inhomogeneous linewidth and low damping factor are obtained for different Ta buffer layer thickness. Ta (100)/FeGaB (100)/Ta (5) film stack shows the lowest damping from 100 K to 300 K. The buffer layer thickness and temperature dependence studies indicate that the interface damping dominates at low temperature 100 K. Hence, these studies are of great importance for development of magnetostrictive microwave devices applications.