Abstract
The undoped ZnO thin films grown on Si (1 1 1) substrates by plasma-assisted molecular beam epitaxy (P-MBE) were reported. The effects of growth temperature, the thickness of low temperature ZnO buffer layer and Zn/O ratio on the quality of high-temperature-overgrown ZnO main layer were studied by atomic force microscopy (AFM), X-ray diffraction (XRD) and room-temperature photoluminescence (PL) spectra. These results showed that it was difficult to directly obtain high quality ZnO films on Si substrate. By introducing a thin ZnO buffer layer at 350 °C, c-axis preferred orientation ZnO films with improved optical properties were obtained at 750 °C. However, the thickness of ZnO buffer layer and Zn/O ratio in the ZnO main layer greatly influenced the quality of high-temperature-overgrown ZnO main layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
