Abstract
An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel ayer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm^2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×10^11 eV^−1cm^−2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×10^7.
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