Abstract
ABSTRACT Ferroelectric Bi3.25La0.75Ti2.80Zr0.20O12 (BLTZ0.20) thin film with Bi4Ti3O12 (BTO) seeding layer BTO/BLTZ0.20/BTO sandwich structure were deposited onto Pt/TiO2/ SiO2/Si substrate using RF magnetron sputtering method. In order to check the influence of the BTO seeding layer thickness on the microstructure and ferroelectric characteristics, the BTO seeding layers were sputtered for 2, 5, 8, 12 minutes with the thickness about 4, 10, 16, 24 nm. The sputtered thin films were annealed at 750°C for 20 minutes in atmospheres. The BLTZ0.20 film and BTO/BLTZ0.20/BTO sandwich structure films XRD measurements show that the major layered perovskite orientations (008), (0010) and (117) have been found. The sample BTO/BLTZ0.20/BTO sandwich structure film with about 10-nm-thick BTO seeding layer showed larger remnant polarization and better fatigue properties compared with the BLTZ0.20 thin films without the seeding layer. The remnant polarization (2Pr) of BLTZ0.20 thin film and BTO/BLTZ0.20/BTO sandwich structure film with about 10-nm-thick BTO seeding layer annealed at 750°C were 18.8 and 28.6 μ C/cm2, respectively.
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