Abstract
ABSTRACT Thin films of Bi3.25La0.75Ti3O12 (BLT) and B-site substituted BLT by Zr, i.e. Bi3.25La0.75Ti3−x Zr x O12 (BLTZx, x = 0.20, 0.50, 0.75, 1.00 and 1.50) were fabricated on Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering method. Effect of Zr4+ amount on the microstructure and ferroelectric characteristics of the thin film BLTZx were investigated. X-ray diffraction shows that A-site La3+ and B-site Zr4+ co-substitution do not destroy the layered perovskite structure. Compared with the well-known BLT thin films, appropriate Zr4+ added, such as the BLTZ0.20 thin film, has larger remnant polarization (2Pr) and better fatigue resistance. However, with further increasing Zr4+-doping concentration, the remnant polarization (2Pr) tends to decrease. When x > 0.75 the remnant polarization become lower than that of BLT thin film. The remnant polarization (2Pr) of the BLTZx thin films under the 12 V were 17.8, 25.6, 22.4, 17.2, 11.6, 10.2 μC/cm2, respectively, for x = 0, 0.20, 0.50, 0.75, 1.00 and 1.50, whereas there are almost no obvious difference in the Vc values.
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