Abstract
Experiments on the oxidation of silicon in a stream of wet oxygen are carried out at various temperatures and for different values of saturation water vapour pressure. The results are consistent with the simple oxidation kinetics derived for oxidation in dry oxygen and for steam giving equations for layer thickness x, of the form: x2 = Cpmt exp (1·18/kT), where C and m are constants and p and t are pressure and time respectively
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