Abstract
Silicon oxidation in dry oxygen containing small amounts (1–3%) of chlorine gas is simulated based on the interfacial silicon emission model. We assume that the presence of chlorine (Cl) reduces the interfacial silicon emission, which governs the oxidation rate at the interface. The simulation is done by reducing the rate of Si-atom emission in the presence of Cl. In addition, the equilibrium concentration of oxygen in the oxide is increased in proportion to Cl concentration to fit the experimental oxide thickness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
