Abstract

Nickel silicide films are used as contacting materials in the micro electronics industry. It was recently [1] discovered that these films exhibit a peculiar type of texture, which was called 'axiotaxy', whereby certain lattice planes in the NiSi grains are preferentially aligned to (110)-type lattice planes in the single crystal Si substrate. In this contribution, we present a quantitative study of this phenomenon, using both XRD pole figure measurements and EBSD. Furthermore, we report a correlation between the texture of these NiSi films and their morphological stability during annealing at high temperature. In spite of the small grain size in these films, EBSD could be used to determine the volume fractions of the various texture components. This provided quantitative support for the claim that axiotaxy is the main texture component in these films, as about 40% of the grains belong to one of the axiotaxial texture components, and the remaining fraction exhibits a random orientation. A discussion of the techniques used during the measurement and analysis of the EBSD data is presented, as this must be given special consideration in view of the peculiar type of texture encountered in these films. Secondly, both XRD and EBSD were performed after annealing the NiSi films at various temperatures and durations. It is known that thin NiSi films have a strong tendency to agglomerate [2]. Our data indicates a correlation between the texture evolution and the agglomeration of the NiSi layer. Grains with axiotaxial orientation were observed to grow and thicken during the annealing process, by consuming neighboring randomly oriented grains. This suggests that the texture of the NiSi layer is a determining factor for the morphological stability of the film. The fact that grains with axiotaxial orientation grow during heat treatment can be related to the one dimensional periodicity at the interface, which lowers the interface energy and thus provides a driving force for the preferred growth of these grains. The agglomeration of NiSi films results in a significant increase of the sheet resistance. Therefore, these results illustrate the importance of texture control for the application of these films as contacts in micro-electronic devices.

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