Abstract
Two micron silicon very large scale integration is now in volume production; 1.2 micro m process lines are being established and substantial quantities of sub-micron gallium arsenide devices are being fabricated. The essential requirement for cost-effective reproduction of high-resolution, undistorted, accurately-registered and defect-free images in process-compatible resists on heavily-contoured substrates up to 150 mm in diameter demands the application of much improved photolithographic technology with the appropriate support of electron-beam mask-generation systems.
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