Abstract
Two micron silicon very large scale integration is now in volume production; 1.2 micro m process lines are being established and substantial quantities of sub-micron gallium arsenide devices are being fabricated. The essential requirement for cost-effective reproduction of high-resolution, undistorted, accurately-registered and defect-free images in process-compatible resists on heavily-contoured substrates up to 150 mm in diameter demands the application of much improved photolithographic technology with the appropriate support of electron-beam mask-generation systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
